2SD1390 データシートの表示（PDF） - Inchange Semiconductor
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2SD1390 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1390
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 1A
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0
VCB= 1500V; IE= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
2
tf
Fall Time
tstg
Storage Time
IC= 2.5A, IBend= 1.1A, LB=B 10μH
V
5.0
V
1.5
V
50 μA
1
mA
7
1
μs
11 μs
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