2SD1264 データシートの表示（PDF） - Inchange Semiconductor
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2SD1264 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1264 2SD1264A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SD1264
150
VCEO
Collector-emitter voltage
IC=5mA ,IB=0
V
2SD1264A
180
VCBO
Collector-base voltage
IC=50μA ,IE=0
200
V
VEBO
Emitter-base voltage
IC=500μA ,IC=0
6
V
VCEsat Collector-emitter saturation voltage
IC=0.5A, IB=50mA
1.0
V
VBE
Base-emitter voltage
IEBO
Emitter cut-off current
ICBO
Collector cut-off current
IC=0.4A ; VCE=10V
VEB=4V; IC=0
VCB=200V; IE=0
1.0
V
50
μA
50
μA
hFE-1
DC current gain
IC=0.15A ; VCE=10V
60
240
hFE-2
DC current gain
IC=0.4A ; VCE=10V
50
fT
Transition frequency
IC=0.5A; VCE=10V,f=10MHz
20
MHz
hFE-1 Classifications
Q
P
60-140
100-240
2
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