2SD1266 データシートの表示（PDF） - Inchange Semiconductor
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2SD1266 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1266
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.2V(Max)@ IC= 3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
·Good Linearity of hFE
·Complement to Type 2SB941
APPLICATIONS
·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
A
35
W
2
150
℃
-55~150
℃
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