2SD1266 データシートの表示（PDF） - Inchange Semiconductor
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2SD1266 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1266
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
60
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICES
Collector Cutoff Current
VCE= 60V; VBE= 0
1.2
V
1.8
V
0.2 mA
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
0.3 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
70
250
hFE-2
fT
DC Current Gain
Current-Gain—Bandwidth Product
IC= 3A ; VCE= 4V
IC= 0.5A ; VCE= 10V; f= 10MHz
10
30
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1A ; IB1= -IB2= 0.1A;
VCC= 50V
0.5
μs
2.5
μs
0.4
μs
u hFE-1 classifications
Q
P
70-150
120-250
isc Website：www.iscsemi.cn
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