2SD1274 データシートの表示（PDF） - Inchange Semiconductor
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2SD1274 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1274 2SD1274A 2SD1274B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A, L=25mH
80
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA, IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
1.6
V
VBE
Base-emitter voltage
IC=5A ; VCE=4V
1.5
V
ICBO
Collector
cut-off current
2SD1274 VCB=150V; IE=0
2SD1274A VCB=200V; IE=0
1
mA
2SD1274B VCB=250V; IE=0
IEBO
Emitter cut-off current
固IN电C半H导AN体GE SEMICONDUCTOR hFE
DC current gain
fT
Transition frequency
tf
Fall time
VEB=5V; IC=0
IC=5A ; VCE=4V
IC=0.5A ; VCE=10V
IC=5A ;IB1=0.8A VEB=-5V
50
μA
14
40
MHz
1.0
μs
2
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