2SD1276 データシートの表示（PDF） - Inchange Semiconductor
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2SD1276 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1276 2SD1276A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SD1276
60
V(BR)CEO
Collector-emitter
breakdown voltage
IC=30mA , IB=0
V
2SD1276A
80
VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=12mA
2
V
VCEsat- Collector-emitter saturation voltage IC=5A ;IB=20mA
4
V
VBE
Base-emitter voltage
VCE=3V; IC=3A
2.5
V
ICBO
Collector
cut-off current
2SD1276
2SD1276A
VCB=60V ;IE=0
VCB=80V; IE=0
0.2
mA
ICEO
Collector
cut-off current
2SD1276
VCE=30V; IB=0
0.5
mA
2SD1276A VCE=40V; IB=0
固IN电C半H导AN体GE SEMICONDUCTOR IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT
Transition frequency
Switching times
VEB=5V; IC=0
IC=3A ; VCE=0.5V
IC=3A ; VCE=3V
IC=0.5A; VCE=10V;f=1MHz
1000
2000
2
mA
10000
20
MHz
ton
Turn-on time
0.5
μs
ts
Storage time
IC=2A ;IB1=8mA
IB2=-8mA;VCC=50V
4
μs
tf
Fall time
1
μs
hFE-2 Classifications
Q
R
2000-5000 4000-10000
2
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