2SD1279 データシートの表示（PDF） - Inchange Semiconductor
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2SD1279 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=2A
VBEsat Base-emitter saturation voltage
IC=8A; IB=2A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
tf
Fall time
ICP=7A ;IB1(end)=1.5A
Product Specification
2SD1279
MIN TYP. MAX UNIT
600
V
5.0
V
1.6
V
10
μA
1.0
mA
8
22
3
MHz
165
pF
1.0
μs
2
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