2SD1275 データシートの表示（PDF） - Quanzhou Jinmei Electronic
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2SD1275 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1275 2SD1275A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter
breakdown voltage
2SD1275
2SD1275A
CONDITIONS
IC=30mA , IB=0
VCEsat Collector-emitter saturation voltage
IC=2A; IB=8mA
VBE
Base-emitter voltage
VCE=4V; IC=2A
2SD1275 VCB=60V; IE=0
ICBO
Collector cut-off current
2SD1275A VCB=80V; IE=0
2SD1275 VCE=30V; IB=0
ICEO
Collector cut-off current
2SD1275A VCE=40V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
fT
Transition frequency
Switching times
IC=2A ; VCE=4V
IC=0.5A;
VCE=10V;f=1MHz
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A ;IB1=8mA
IB2=-8mA;VCC=50V
hFE-2 Classifications
Q
R
2000-5000 4000-10000
MIN
TYP.
MAX UNIT
60
V
80
2.5
V
2.8
V
1
mA
1000
2000
2
mA
2
mA
10000
20
MHz
0.5
μs
4
μs
1
μs
JMnic
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