UTC2SD1624(RevA) データシートの表示（PDF） - Unisonic Technologies
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UTC2SD1624 Datasheet PDF : 4 Pages
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UTC 2SD1624 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHIG
APPLICATION
DESCRIPTION
The UTC 2SD1624 applies to voltage regulators, relay
drivers, lamp drivers, and electrical equipment.
FEATURES
*Adoption of FBET, MBIT processes
*Low collector-to-emitter saturation voltage
*Fast switching speed.
*Large current capacity and wide ASO.
MARKING
XX
DG
1
SOT-89
1:EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
6
Collector Power Dissipation( Tc=25°C)
Pc
500
Collector Current(DC)
Ic
3
Collector Current(PULSE)
Icp
6
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mW
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cutoff Current
ICBO
VCB=40V,IE=0
Emitter Cutoff Current
IEBO
VEB=4V,IC=0
DC Current Gain (note)
hFE
VCE=2V, Ic=100mA
100
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
Output Capacitance
Cob
VCE=10V,f=1MHz
C-E Saturation Voltage
VCE(sat)
IC=2A,IB=100mA
B-E Saturation Voltage
VBE(sat)
IC=2A,IB=100mA
C-B Breakdown Voltage
V(BR)CBO
IC=10µA,IE=0
60
C-E Breakdown Voltage
V(BR)CEO
IC=1mA,RBE=∞
50
E-B Breakdown Voltage
V(BR)EBO
IE=10µA,IC=0
6
Turn-on Time
ton
See test circuit
TYP
150
25
0.19
0.94
70
MAX
1
1
560
0.5
1.2
UNIT
µA
µA
MHz
pF
V
V
V
V
V
ns
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R208-005,A
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