2SD1633 データシートの表示（PDF） - Inchange Semiconductor
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2SD1633 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=3mA
VBEsat Base-emitter saturation voltage
IC=3A; IB=3mA
ICBO
Collector cut-off current
VCB=100V;IE=0
ICEO
Collector cut-off current
VCE=100V; IB=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=3A ; VCE=3V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A ;IB1=3mA
IB2=-3mA; VCC=50V
hFE Classifications
Q
P
1500-6000 5000-10000
Product Specification
2SD1633
MIN TYP. MAX UNIT
100
V
1.5
V
2.0
V
100
μA
100
μA
5
mA
1500
10000
3.0
μs
5.0
μs
3.0
μs
2
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