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2SD1705 データシートの表示(PDF) - Panasonic Corporation
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コンポーネント説明
メーカー
2SD1705
Silicon NPN epitaxial planar type Power Transistors
Panasonic Corporation
2SD1705 Datasheet PDF : 4 Pages
1
2
3
4
2SD1705
120
100
80
(1)
60
P
C
T
a
(1)T
C
=Ta
(2)With a 100
×
100
×
2mm
Al heat sink
(3)Without heat sink
(P
C
=3.0W)
40
20
(2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature T
a
(
°
C)
I
C
V
CE
20
T
C
=25˚C
I
B
=400mA
16
250mA
12
200mA
160mA
120mA
8
100mA
80mA
60mA
4
40mA
20mA
0
0 2 4 6 8 10 12
Collector-emitter voltage V
CE
(V)
V
CE(sat)
I
C
10
(1) I
C
/I
B
=10
(2) I
C
/I
B
=20
T
C
=25˚C
1
(2)
(1)
0.1
0.01
0.1
1
10
Collector current I
C
(A)
V
CE(sat)
I
C
10
I
C
/I
B
=10
1
T
C
=100˚C
25˚C
–25˚C
0.1
V
BE(sat)
I
C
100
I
C
/I
B
=10
10
1
T
C
=–25˚C
100˚C
25˚C
0.1
1 000
h
FE
I
C
V
CE
=2V
T
C
=100˚C
25˚C
100
–25˚C
10
0.01
0.1
1
10
Collector current I
C
(A)
0.01
0.01
0.1
1
10
Collector current I
C
(A)
1
0.1
1
10
Collector current I
C
(A)
1 000
100
10
1
f
T
I
C
V
CE
=10V
f=1MHz
T
C
=25˚C
t
on
, t
stg
, t
f
I
C
100
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10(I
B1
=–I
B2
)
V
CC
=50V
T
C
=25˚C
10
t
stg
1
t
on
t
f
0.1
Safe operation area
100
Non repetitive pulse
T
C
=25˚C
I
CP
10
I
C
t=10ms
t=1ms
DC
1
0.1
0.1
0.01
0.1
1
10
Collector current I
C
(A)
0.01
0
2
4
6
8
Collector current I
C
(A)
0.01
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
2
SJD00210BED
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