2SD1754(2003) データシートの表示（PDF） - Panasonic Corporation
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2SD1754 Datasheet PDF : 3 Pages
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Power Transistors
2SD1754, 2SD1754A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SD1754 VCBO
80
V
(Emitter open)
2SD1754A
100
Collector-emitter voltage 2SD1754 VCEO
60
V
(Base open)
2SD1754A
80
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
6
A
Base current
IB
1
A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SD1754 VCEO IC = 25 mA, IB = 0
60
V
(Base open)
2SD1754A
80
Collector-base cutoff
current (Emitter open)
2SB1754 ICBO
2SB1754A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
ICEO
IEBO
hFE
VCE(sat)
fT
VCB = 80 V, IE = 0
VCB = 100 V, IE = 0
VCE = 40 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 0.5 A
IC = 2 A, IB = 0.05 A
VCE = 12 V, IC = 0.2 A, f = 10 MHz
100 µA
100
100 µA
100 µA
500
1 500
1.0
V
50
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE
500 to 1 000 800 to 1 500
Publication date: September 2003
SJD00226BED
1
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