2SD1784 データシートの表示（PDF） - Toshiba
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2SD1784 Datasheet PDF : 5 Pages
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2SD1784
TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
2SD1784
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
• High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
VCBO
30
V
VCEO
30
V
VEBO
10
V
IC
1.5
A
IB
50
mA
PC
1000
mW
(Note 1)
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: 2SD1784 mounted on a ceramic substrate (250 mm2 × 0.8 mm)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-10
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