2SD1652 データシートの表示（PDF） - Inchange Semiconductor

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2SD1652

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=200mA , IC=0

V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=5mA; IE=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A

VBEsat Base-emitter saturation voltage

IC=5A ;IB=1A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V

VF

Diode forward voltage

tf

Fall time

IF=6A

IC=5A;IB1=1A;IB2=-2A

VCC=200V;RL=40Ω

Product Specification

2SD1652

MIN TYP. MAX UNIT

7

V

800

V

1500

V

5.0

V

1.5

V

10

μA

40

130 mA

8

3

MHz

2.0

V

0.4 μs

2

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