2SD1712 データシートの表示（PDF） - Inchange Semiconductor
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2SD1712 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A
VBE
Base-emitter on voltage
IC=3A ; VCE=5V
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE -2
DC current gain
IC=1A ; VCE=5V
hFE -3
DC current gain
IC=3A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=5V
hFE-2 classifications
Q
S
60-120
80-60
P
100-200
Product Specification
2SD1712
MIN TYP. MAX UNIT
2.0
V
1.8
V
50
μA
50
μA
20
60
200
20
70
pF
20
MHz
2
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