2SD1756 データシートの表示（PDF） - Inchange Semiconductor

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2SD1756

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD1756

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; L= 5mH

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 10mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 5A; IB=B 10mA

VBE(sat)-2 Base-Emitter Saturation Voltage

IC= 10A; IB= 100mA

ICEO

Collector Cutoff Current

VCE= 180V; RBE= ∞

hFE

DC Current Gain

IC= 5A; VCE= 3V

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 5A, IB1= -IB2= 10mA;

VCC= 30V

MIN TYP. MAX UNIT

170

V

200

V

7

V

1.5

V

3.5

V

2.0

V

4.0

V

500 μA

1500

0.9

μs

8.0

μs

3.5

μs

isc Website：www.iscsemi.cn

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