2SD1847 データシートの表示（PDF） - Inchange Semiconductor
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2SD1847 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1847
DESCRIPTION
·Collector-Base Breakdown Voltage-
: VCBO= 1500V (Min.)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications
.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
15
A
IBB
Base Current- Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2
A
3
W
100
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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