2SD1888 データシートの表示（PDF） - Inchange Semiconductor
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2SD1888 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1888
DESCRIPTION
·With TO-220C package
·DARLINGTON
·Complement to type 2SB1339
·High DC current gain
APPLICATIONS
·Low frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
Ta=25℃
VALUE
120
120
6
6
10
40
2
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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