2SD1888 データシートの表示（PDF） - Inchange Semiconductor
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2SD1888 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1888
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=50μA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=5mA;IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=2A ; VCE=3V
fT
Transition frequency
IE=-0.2A ; VCE=5V;f=10MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
120
V
120
V
1.5
V
100 μA
3.0 mA
2000
20000
40
MHz
50
pF
2
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