2SD1991A データシートの表示（PDF） - Panasonic Corporation
部品番号
コンポーネント説明
メーカー
2SD1991A Datasheet PDF : 5 Pages
| |||
Transistors
2SD1991A
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1320A
■ Features
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
60
V
Collector-emitter voltage (Base open) VCEO
50
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
(0.7)
6.9±0.1
(4.0)
0.65 max.
Unit: mm
2.5±0.1
(0.8)
0.45+–00..0150
1.05±0.05
0.45+–00..0150
2.5±0.5
2.5±0.5
123
1: Emitter
2: Collector
3: Base
MT-1-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
60
V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
1
µA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
1
µA
Forward current transfer ratio
hFE1 * VCE = 10 V, IC = 2 mA
160
460
hFE2 VCE = 2 V, IC = 100 mA
90
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1 0.3
V
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No rank
hFE1
160 to 260 210 to 340 290 to 460 160 to 460
Product of no-rank classification is not marked.
Publication date: April 2003
SJC00234BED
1
Share Link: 