2SD2130 データシートの表示（PDF） - Toshiba

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2SD2130

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)

Toshiba 

2SD2130

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)

2SD2130

Micro Motor Drive, Hammer Drive Applications

Switching Applications

Power Amplifier Applications

Unit: mm

· High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

· Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA)

· Zener diode included between collector and base.

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

DC

Pulse

Base current

Collector power

dissipation

Ta = 25°C

Tc = 25°C

Junction temperature

Storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

PC

Tj

Tstg

Rating

Unit

60 ± 10

V

60 ± 10

V

6

V

±4

A

±6

0.5

A

1.5

W

10

150

°C

−55 to 150

°C

Equivalent Circuit

COLLECTOR

BASE

≈ 5 kΩ

≈ 200 Ω

EMITTER

JEDEC

―

JEITA

―

TOSHIBA

2-8H1A

Weight: 0.82 g (typ.)

1

2003-02-04

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