2SD1976 データシートの表示（PDF） - Hitachi -> Renesas Electronics

部品番号

コンポーネント説明

メーカー

2SD1976

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD1976

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Diode current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

ID*1

I C(peak)

PC * 1

Tj

Tstg

Rating

Unit

300

V

300

V

7

V

6

A

6

A

10

A

40

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 300 —

voltage

Collector to emitter sustain

voltage

VCEO(SUS) 300

—

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

I CEO

—

—

DC current transfer ratio

hFE

500 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Emitter to collector diode

forward voltage

VECF

—

—

Turn on time

Storage time

Fall time

t on

—

1.2

t stg

—

8.0

tf

—

8.0

Max Unit

420 V

—

V

—

V

100 µA

—

1.5 V

2.0 V

3.5 V

—

µs

—

Test conditions

IC = 0.1 mA, IE = 0

IC = 3 A, RBE = ∞, L = 10 mH

IE = 50 mA, IC = 0

VCE = 300 V, RBE = ∞

VCE = 2 V, IC = 4 A

IC = 4 A, IB = 40 mA

IC = 4 A, IB = 40 mA

IF = 6 A

IC = 4 A, VCC = 20 V

IB1 = –IB2 = 40 mA

2

Share Link: