2SD2019 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SD2019

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD2019

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

C to E diode forward current

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC * 1

Tj

Tstg

ID*1

Ratings

Unit

150

V

80

V

8

V

1.5

A

3

A

10

W

150

°C

–55 to +150

°C

1.5

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 150 —

voltage

Collector to emitter breakdown V(BR)CEO 80

—

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CBO

I CEO

hFE

hFE

hFE

VCE(sat)

—

—

—

—

2000 —

5000 —

1000 —

—

—

Base to emitter saturation

VBE(sat)

—

—

voltage

C to E diode forward voltage VD

Note: 1. Pulse test.

—

—

Max Unit

—

V

—

V

—

V

5

µA

5

µA

—

30000

—

1.5 V

2.0 V

3.0 V

Test conditions

IC = 1 mA, IE = 0

IC = 10 mA, RBE = ∞

IE = 50 mA, IC = 0

VCB = 120 V, IE = 0

VCE = 65 V, RBE = ∞

VCE = 2 V, IC = 0.15 A*1

VCE = 2 V, IC = 1 A*1

VCE = 2 V, IC = 1.5 A*1

IC = 1 A, IB = 1 mA*1

IC = 1 A, IB = 1 mA*1

ID = 1.5 A*1

2

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