2SD2047 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2SD2047 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD2047
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
700
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
1500
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
10
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2.0A
ICBO
Collector Cutoff Current
VCB= 750V ; IE= 0
VCB= 1500V ; IE= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
18
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2.5A, IB1= 0.25A; IB2= -0.5A
V
V
V
2.0
V
1.5
V
50 μA
1.0 mA
50
1.0 μs
3.0 μs
0.5 μs
isc Website：www.iscsemi.cn
2
Share Link: 