2SD2550 データシートの表示（PDF） - Inchange Semiconductor

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2SD2550

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD2550

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 400mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.8A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A; IB=B 0.8A

ICBO

Collector Cutoff Current

VCB= 1700V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 1A; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 4A

fT

Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V

COB

Output Capacitance

Switching Times

IE= 0; VCB= 10V; ftest=1.0MHz

ts

Storage Time

tf

Fall Time

ICP= 3A, IB1(end)= 0.8A,

fH= 15.75kHz

MIN TYP. MAX UNIT

5

V

8.0

V

1.5

V

1.0 mA

66

200 mA

8

22

2.0

V

3

MHz

85

pF

10 μs

0.6 μs

isc Website：www.iscsemi.cn

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