2SD2558 データシートの表示（PDF） - Inchange Semiconductor
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2SD2558 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2558
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·High DC Current Gain-
: hFE= 1500( Min.) @(IC= 1A, VCE= 5V)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 1A, IB=B 5mA)
APPLICATIONS
·Designed for series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
2
A
60
W
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn
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