2SD2374A データシートの表示（PDF） - Inchange Semiconductor
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2SD2374A Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2374 2SD2374A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
voltage
2SD2374
2SD2374A
IC=30mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.375A
VBE
Base-emitter voltage
IC=3A ; VCE=4V
ICBO
Collector
cut-off current
2SD2374 VCB=60V; IE=0
2SD2374A VCB=80V; IE=0
ICEO
Collector
cut-off current
2SD2374 VCE=30V; IB=0
2SD2374A VCE=60V; IB=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1.0A; IB1=-IB2=0.1A
VCC=50V
hFE-1 Classifications
Q
P
70-150
120-250
MIN TYP. MAX UNIT
60
V
80
1.2
V
1.8
V
200
μA
300
μA
1
mA
70
250
10
30
MHz
0.5
μs
2.5
μs
0.4
μs
2
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