2SD2385 データシートの表示（PDF） - Inchange Semiconductor
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2SD2385 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2385
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
·High DC Current Gain-
: hFE= 5000(Min)@IC= 7A
·Complement to Type 2SB1556
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.1
A
100
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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