2SD2386 データシートの表示（PDF） - Inchange Semiconductor
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2SD2386 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
2SD2386
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB1557
·High breakdown voltage:VCEO=140V(Min)
APPLICATIONS
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
140
140
5
7
0.1
70
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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