2SD2386 データシートの表示（PDF） - Inchange Semiconductor
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2SD2386 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=6mA
VBE
Base-emitter voltage
IC=6A ; VCE=5V
ICBO
Collector cut-off current
VCB=140V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=6A ; VCE=5V
hFE-2
DC current gain
IC=10A ; VCE=5V
Cob
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=5V
hFE-1 Classifications
A
B
C
5000-12000 9000-18000 15000-30000
Product Specification
2SD2386
MIN TYP. MAX UNIT
140
V
2.5
V
3.0
V
5.0
μA
5.0
μA
5000
30000
2000
90
pF
30
MHz
2
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