2SD2390 データシートの表示（PDF） - Inchange Semiconductor
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2SD2390 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=7mA
VBEsat Base-emitter saturation voltage
IC=7A ;IB=7mA
ICBO
Collector cut-off current
VCB=160V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=7A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=2A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;RL=10Ω
IB1=- IB2=7mA
VCC=70V
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
Product Specification
2SD2390
MIN TYP. MAX UNIT
150
V
2.5
V
3.0
V
100 μA
100 μA
5000
95
pF
55
MHz
0.5
μs
10.0
μs
1.1
μs
2
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