2SD2237 データシートの表示（PDF） - Inchange Semiconductor
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2SD2237 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2237
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= 2A
·Low Collector Saturation Voltage-
: VCE(sat) = 2.0V(Max.) @IC= 5A
·Complement to Type 2SB1478
APPLICATIONS
·Designed for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
8
A
60
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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