D2257 データシートの表示（PDF） - Inchange Semiconductor
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D2257 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=1.5mA
VBEsat Base-emitter saturation voltage
IC=1.5A ;IB=1.5mA
ICBO
IEBO
hFE-1
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=100V ;IE=0
VEB=8V; IC=0
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=2A ; VCE=2V
VECF
Diode forward voltage
IE=1A
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=1.5mA
VCC=30V ,RL=20Ω
Duty cycle≤1%
Product Specification
2SD2257
MIN TYP. MAX UNIT
100
V
1.5
V
2.0
V
10
μA
0.8
4.0 mA
2000
2000
2.0
V
0.5
μs
2.0
μs
0.5
μs
2
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