SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
2SD2439
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=7 A;IB=7m A
VBEsat
Base-emitter saturation voltage
IC=7 A;IB=7m A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VCB=160V ;IE=0
VEB=5V; IC=0
IC=7A ; VCE=4V
IC=2A ; VCE=12V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;RL=10B
IB1=-IB2=7mA
VCC=70V
MIN TYP. MAX UNIT
150
V
2.5
V
3.0
V
100
µA
100
µA
5000
55
MHz
95
pF
0.5
µs
10.0
µs
1.1
µs
hFE classifications
O
P
Y
5000-12000 6500-20000 15000-30000
2