2SD2493 データシートの表示（PDF） - Inchange Semiconductor
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2SD2493 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
2SD2493
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
110
V
VCEsat Collector-emitter saturation voltage IC=5A ;IB=5mA
2.5
V
VBEsat
ICBO
IEBO
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=5A ;IB=5mA
VCB=110V; IE=0
VEB=5V; IC=0
3.0
V
100
μA
100
μA
hFE
DC current gain
IC=5A ; VCE=4V
5000
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
55
pF
fT
Transition frequency
IC=2A ; VCE=12V
60
MHz
Switching times
固IN电C半H导AN体GE SEMICONDUTOR ton
Turn-on time
0.8
IC=5A;RL=6Ω
ts
Storage time
IB1=- IB2=5mA
6.2
VCC=30V
tf
Fall time
1.1
hFE Classifications
μs
μs
μs
O
P
Y
5000-12000 6500-20000 15000-30000
2
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