2SD2642 データシートの表示（PDF） - Inchange Semiconductor
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2SD2642 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2642
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 5mA
ICBO
Collector Cutoff Current
VCB= 110V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 4V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V; ftest= 1MHz
IE= -0.5A ; VCE= 12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC= 30V, RL= 6Ω,
IC= 5A; IB1= -IB2= 5mA,
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
MIN TYP. MAX UNIT
110
V
2.5
V
3.0
V
100 μA
100 μA
5000
55
pF
60
MHz
0.8
μs
6.2
μs
1.1
μs
isc Website：www.iscsemi.cn
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