2SD2645 データシートの表示（PDF） - Inchange Semiconductor

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2SD2645

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD2645

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A

VBE(sat) Base-Emitter Saturation Voltage

IC= 7.2A; IB= 1.44A

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

ICES

Collector Cutoff Current

VCE= 1500V; RBE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

hFE-2

DC Current Gain

IC= 8A; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 8A

tf

Fall Time

IC= 5A, IB1= 1A; IB2= -2A

MIN TYP. MAX UNIT

800

V

3.0

V

1.5

V

10 μA

1.0 mA

40

130 mA

15

5

8

2.0

V

0.3 μs

isc Website：www.iscsemi.cn

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