2SD357 データシートの表示（PDF） - Inchange Semiconductor

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2SD357

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD357

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞

100

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

110

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA

1.0

V

VBE(on) Base-Emitter On Voltage

IC= 50mA; VCE= 4V

0.7

V

ICBO

ICEO

IEBO

hFE

www.iscsemi.cn Collector Cutoff Current

VCB= 25V; IE= 0

Collector Cutoff Current

VCE= 100V; RBE= ∞

Emitter Cutoff Current

VEB= 5V; IC= 0

DC Current Gain

IC= 0.3A; VCE= 4V

55

10 μA

1

mA

10 μA

300

‹ hFE Classifications

C

D

E

55-110 90-180 150-300

isc Website：www.iscsemi.cn

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