2SD427R データシートの表示（PDF） - Inchange Semiconductor
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2SD427R Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD427
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
2.5
V
2.0
V
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1
mA
hFE-1
hFE-2
COB
fT
www.iscsemi.cn DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
IC= 5A; VCE= 5V
IE= 0; VCB= 10V; f= 1MHz
IC= 1A; VCE= 5V
40
20
170
5
140
pF
MHz
hFE-1 Classifications
R
O
40-80
70-140
isc Website：www.iscsemi.cn
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