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2SD745B データシートの表示(PDF) - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2SD745B
Silicon NPN Power Transistors
Inchange Semiconductor
2SD745B Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD745/745A/745B
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter
breakdown voltage
2SD745
2SD745A I
C
=25mA; I
B
=0
2SD745B
V
CEsat
Collector-emitter saturation voltage I
C
=5A;I
B
=0.5 A
V
BEsat
Base-emitter saturation voltage
I
C
=5A;I
B
=0.5 A
I
CBO
Collector cut-off current
I
EBO
Emitter cut-off current
h
FE-1
DC current gain
h
FE-2
DC current gain
V
CB
=140V; I
E
=0
V
EB
=3V; I
C
=0
I
C
=50mA ; V
CE
=5V
I
C
=2A ; V
CE
=5V
f
T
Transition frequency
I
C
=0.2A ; V
CE
=5V
C
OB
Output capacitance
I
E
=0; V
CB
=10V;f=1MHz
MIN TYP. MAX UNIT
140
150
V
160
1.5
V
2.0
V
50
μ
A
50
μ
A
20
40
200
15
MHz
270
pF
h
FE-2
classifications
S
R
Q
40-80 60-120 100-200
2
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