2SD866P データシートの表示（PDF） - Inchange Semiconductor
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2SD866P Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD866
2SD866A
IC=0.2A; IB=0
VCEsat Collector-emitter saturation voltage IC=5 A;IB=B 0.25 A
VBEsat Base-emitter saturation voltage
IC=5 A;IB=B 0.25 A
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
IC=3A;IB1=-IB2=0.3 A
tf
Fall time
hFE-2 classifications
R
Q
P
60-120 90-180 130-260
Product Specification
2SD866 2SD866A
MIN TYP. MAX UNIT
80
V
100
0.5
V
1.5
V
10
μA
50
μA
45
60
260
30
MHz
0.5
μs
1.5
μs
0.1
μs
2
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