2SD998 データシートの表示（PDF） - SavantIC Semiconductor
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2SD998 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD998
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=0.5A;VCE=5V
VCB=120V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
MIN TYP. MAX UNIT
120
V
2.5
V
1.5
V
10
µA
10
µA
55
160
12
MHz
170
pF
hFE Classifications
R
O
55-110
80-160
2
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