2SJ0164 データシートの表示（PDF） - Panasonic Corporation
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2SJ0164 Datasheet PDF : 3 Pages
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Silicon Junction FETs (Small Signal)
2SJ0164 (2SJ164)
Silicon P-Channel Junction FET
For switching
Complementary to 2SK1104
I Features
G Low ON-resistance
G Low-noise characteristics
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
VGDS
ID
IG
PD
Tch
Tstg
65
V
−20
mA
−10
mA
300
mW
150
°C
−55 to +150
°C
4.0±0.2
2.0±0.2
unit: mm
0.75 max.
0.45+–00..1200
(2.5) (2.5)
123
0.45+–00..1200
0.7±0.1
1: Source
2: Gate
3: Drain
NS-B1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current IDSS*
VDS = −10V, VGS = 0
− 0.2
−6
mA
Gate to Source leakage current IGSS
VGS = 30V, VDS = 0
10
nA
Gate to Drain voltage
VGDS
IG = 10µA, VDS = 0
65
V
Gate to Source cut-off voltage VGSC
VDS = −10V, ID = −10µA
1.5
3.5
V
Forward transfer admittance
| Yfs |
VDS = −10V, ID = −1mA, f = 1kHz
1.8
2.5
mS
Drain to Source ON-resistance RDS(on) VDS = −10mV, VGS = 0
300
Ω
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
VDS = −10V, VGS = 0, f = 1MHz
10
pF
3
pF
Reverse transfer capacitance (Common Source) Crss
3
pF
* IDSS rank classification
Runk
O
P
IDSS (mA) − 0.2 to −1 − 0.6 to −1.5
Q
−1 to −3
R
−2.5 to −6
Note) The part number in the parenthesis shows conventional part number.
237
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