J305 データシートの表示（PDF） - Toshiba

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J305

P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

Toshiba 

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ305

High Speed Switching Applications

Analog Applications

· High input impedance

· Low gate threshold voltage.: Vth = −0.5~−1.5 V

· Excellent switching times.: ton = 0.06 µs (typ.)

toff = 0.15 µs (typ.)

· Low drain-source ON resistance: RDS (ON) = 2.4 Ω (typ.)

· Small package.

· Complementary to 2SK2009

2SJ305

Unit: mm

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

DC drain current

Drain power dissipation

Channel temperature

Storage temperature range

VDS

VGSS

ID

PD

Tch

Tstg

-30

V

±20

V

-200

mA

200

mW

150

°C

-55~150

°C

Note: This transistor is electrostatic sensitive device.

Please handle with caution.

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1F

Weight: 0.012 g (typ.)

Marking

Equivalent Circuit

1

2003-03-27

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