2SJ338(2002) データシートの表示（PDF） - Toshiba
部品番号
コンポーネント説明
メーカー
2SJ338 Datasheet PDF : 3 Pages
| |||
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ338
Audio Frequency Power Amplifier Application
High breakdown voltage
High forward transfer admittance
Complementary to 2SK2162
: VDSS = −180 V
: |Yfs| = 0.7 S (typ.)
2SJ338
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
PD
Tch
Tstg
−180
V
±20
V
−1
A
20
W
150
°C
−55~150
°C
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Marking
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2002-06-27
Share Link: 