2SJ338(2002) データシートの表示（PDF） - Toshiba

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2SJ338
(Rev.:2002)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain−source breakdown voltage

Gate−source cut−off voltage

(Note 2)

Drain−source saturation voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

IGSS

V (BR) DSS

V GS (OFF)

VDS (ON)

|Yfs|

Ciss

Coss

Qrss

VDS = 0, VGS = ±20 V

ID = −10 mA, VGS = 0

VDS = −10 V, ID = −10 mA

ID = −0.6 A, VGS = −10 V

VDS = −10 V, ID = −0.3 A

VDS = −10 V, VGS = 0 , f = 1 MHz

VDS = −10 V, VGS = 0 , f = 1 MHz

VDS = −10 V, VGS = 0 , f = 1 MHz

Note 2: VGS (OFF) Classification

O: −0.8~−1.6, Y: −1.4~−2.8

This transistor is the electrostatic sensitive device.

Please handle with caution.

2SJ338

Min Typ. Max Unit

—

— ±100 nA

−180 —

—

V

−0.8

— −2.8

V

—

−1.2 −3.0

V

—

0.7

—

S

—

210

—

—

90

—

pF

—

45

—

2

2002-06-27

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