Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain−source breakdown voltage
Gate−source cut−off voltage
(Note 2)
Drain−source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IGSS
V (BR) DSS
V GS (OFF)
VDS (ON)
|Yfs|
Ciss
Coss
Qrss
VDS = 0, VGS = ±20 V
ID = −10 mA, VGS = 0
VDS = −10 V, ID = −10 mA
ID = −0.6 A, VGS = −10 V
VDS = −10 V, ID = −0.3 A
VDS = −10 V, VGS = 0 , f = 1 MHz
VDS = −10 V, VGS = 0 , f = 1 MHz
VDS = −10 V, VGS = 0 , f = 1 MHz
Note 2: VGS (OFF) Classification
O: −0.8~−1.6, Y: −1.4~−2.8
This transistor is the electrostatic sensitive device.
Please handle with caution.
2SJ338
Min Typ. Max Unit
—
— ±100 nA
−180 —
—
V
−0.8
— −2.8
V
—
−1.2 −3.0
V
—
0.7
—
S
—
210
—
—
90
—
pF
—
45
—
2
2002-06-27