2SJ439 データシートの表示（PDF） - Toshiba

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2SJ439

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOSV)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Gate leakage current

Drain cutoff current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source ON-resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±6.5 V, VDS = 0 V

VDS = −16 V, VGS = 0 V

ID = −10 mA, VGS = 0 V

VDS = −10 V, ID = −1 mA

VGS = −2.5 V, ID = −2.5 A

VGS = −4 V, ID = −2.5 A

VDS = −10 V, ID = −2.5 A

VDS = −10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn-on time

ton

Switching time

Fall time

tf

Turn-off time

Total gate charge

(Gate-source plus gate-drain)

Gate-source charge

Gate-drain (“Miller”) charge

toff

Qg

Qgs

VDD ≈ −16 V, VGS = −5 V, ID = −5 A

Qgd

2SJ439

Min Typ. Max Unit

—

—

±10

μA

—

— −100 μA

−16 —

—

V

−0.5 —

−1.1

V

— 0.18 0.28

Ω

— 0.14 0.2

3.0 6.0

—

S

— 1050 —

— 120 —

pF

— 460 —

—

80

—

— 100 —

ns

— 250 —

— 550 —

—

24

—

—

16

—

nC

—

8

—

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min Typ. Max Unit

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

IDR

IDRP

VDSF

trr

Qrr

—

—

IDR = −5 A, VGS = 0 V

IDR = −5 A, VGS = 0 V,dlDR / dt = 50 A / μs

—

—

−5

A

—

—

−20

A

—

—

1.7

V

—

120

—

ns

— 0.12 —

μC

Marking

J439

Part No.

Lot No.

Note 3

Note 3 : A line under a Lot No. identifies the indication of product Labels

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is Directive 2002/95/EC of the European Parliament and

of the Council of 27 January 2003 on the restriction of the use of certain

hazardous substances in electrical and electronic equipment.

2

2010-02-05

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