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2SJ222 データシートの表示(PDF) - Hitachi -> Renesas Electronics
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2SJ222
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
2SJ222 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SJ222
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µ
s, duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I *
1
D(pulse)
I
DR
Pch*
2
Tch
Tstg
Ratings
Unit
–100
V
±
20
V
–20
A
–80
A
–20
A
35
W
150
°
C
–55 to +150
°
C
2
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