2SJ246 L , 2SJ246 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V(BR)DSS –30
—
voltage
—
V
ID = –10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS ±20
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS
—
—
–100 µA VDS = –25 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off)
–1.0 —
–2.5 V
VDS = –10 V, ID = –1 mA
———————————————————————————————————————————
Static drain to source on state RDS(on)
resistance
—
0.12 0.17 Ω ID = –4 A
VGS = –10 V
————————————————————————
—
0.21 0.31 Ω ID = –4 A
VGS = –4 V
———————————————————————————————————————————
Forward transfer admittance |yfs|
3.0
5.0
—
S
VDS = –10 V
ID = –4 A
———————————————————————————————————————————
Input capacitance
Ciss
—
660
—
pF VDS = –10 V
————————————————————————————————
Output capacitance
Coss
—
465
—
pF VGS = 0
————————————————————————————————
Reverse transfer capacitance Crss
—
180
—
pF f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
td(on)
—
10
—
ns VGS = –10 V
————————————————————————————————
Rise time
tr
—
55
—
ns ID = –4 V
————————————————————————————————
Turn–off delay time
td(off)
—
135
—
ns RL = 7.5 Ω
————————————————————————————————
Fall time
tf
—
135
—
ns
———————————————————————————————————————————
Body–drain diode forward
VDF
voltage
—
–1.2 —
V
IF = –7 A, VGS = 0
———————————————————————————————————————————
Body–drain diode reverse
trr
—
90
—
µs IF = –7 A, VGS = 0,
recovery time
diF / dt = 50 A / µs
———————————————————————————————————————————